Pulsed Magnet ron Sputtering Deposit ion of DLC Films Part II : High-voltage Bias-assisted Deposition
Chun, Hui-Gon;Lee, Jing-Hyuk;You, Yong-Zoo;Ko, Yong-Duek;Cho, Tong-Yul;Nikolay S. Sochugov;
School of Materials Science and Engineering, Remm, University of Ulsan;
Short ($ au$=40 $mutextrm{s}$) and high-voltage ($U_{sub}$=2~8 kV) negative substrate bias pulses were used to assist pulsed magnetron sputtering DLC films deposition. Space- and time-resolved probe measurements of the plasma characteristics have been performed. It was shown that in case of high-voltage substrate bias spatial non-uniformity of the magnetron discharge plasma density greatly affected DLC deposition process. By Raman spectroscopy it was found that maximum percentage of s $p^3$-bonded carbon atoms (40 ~ 50%) in the coating was attained at energy $E_{c}$ ~700 eV per deposited carbon atom. Despite rather low diamond-like phase content these coatings are characterized by good adhesion due to ion mixing promoted by high acceleration voltage. Short duration of the bias pulses is also important to prevent electric breakdowns of insulating DLC film during its growth.wth.
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