저널

ZnTe films have been grown on (100) GaAs substrate with two representative problems. The one is lattice mismatch, the other is thermal expansion coefficients mismatch of ZnTe /GaAs. It claims here, the relationship of film thickness and defects distribution with (100) ZnTe/GaAs using hot wall epitaxy (HWE) growth was investigated by transmission electron microscopy (TEM). It analyzed on the two-sort side using TEM with cross-sectional transmission electron microscopy (XTEM) and high-resolution electron microscopy (HREM). Investigation into the nature and behavior of dislocations with dependence-thickness in (100) ZnTe/ (100) GaAs hetero-structures grown by transmission electron microscopy (TEM). This defects range from interface to 0.7 $mu extrm{m}$ was high density, due to the large lattice mismatch and thermal expansion coefficients. The defects of low density was range 0.7$mu extrm{m}$~1.8$mu extrm{m}$. In the thicker range than 1.8$mu extrm{m}$ was measured hardly defects.

ZnTe;GaAs;XTEM;HREM;dislocation;