한국표면공학회지 (35권1호 33-38)
Nucleation and growth mechanism of nitride films deposited on glass by unbalanced magnetron sputtering
마그네트론 스퍼터링에 의하여 다양한 기판 위에 증착된 CrN 박막의 핵생성과 성장거동
정민재;남경훈;한전건;
성균관대학교 금속재료공학부 플라즈마응용표면기술연구센터;
For the evaluation of nucleation and growth behaviors influenced by substrate properties, such as surface energy, structure and electrical properties, chromium nitride films (CrN) were deposited on various substrates (glass, AISI 1040 steel and Si (110) by unbalanced magnetron sputtering. X-ray diffraction and Atomic Force Microscopy (AFM) were used to study the microstructure and grain growth as a function of deposition time. The diffraction patterns of CrN thin films deposited on Si (110) exhibited crystalline structure with highly preferred orientation of (200) plane parallel to the substrate, whereas the films deposited on glass and AISI 1040 exhibited preferred orientations (200) and minor orientation (111), (311) or (220) plane. The orientation of films deposited both on glass and Si substrates did not depend on the bias voltage (Vs). The grain growth and structure of film deposited on AISI 1040 steel substrate are strongly influenced by the substrate bias in comparison with that deposited onto glass and Si substrates. The differences in the structure and grain growth of CrN films deposited onto different substrates are predominantly related to the properties of the substrate (structure and electrical conductivity).