Growth and characterization of BON thin films prepared by low frequency RF plasma enhanced MOCVD method
G.C. Chen;D.C. Lim;Lee, S.B.;B.Y. Hong;Kim, Y.J.;J.H. Boo;
Center for Advanced Plasma Surface Technology, SungKyunKwan University;
It was first time that low frequency R.F. derived plasma enhanced MOCVD with frimethylborate precursor was used to fabricate a new ternary compound $BO_{x}$ $N_{y}$ . The formation of BON molecule was resulted from nitrogen nitrifying B-O, and forming the angular molecule structure proved by XPS and FT-IR results. The relationship between hardness and film thickness was studied. An thickness-independent hardness was fond about 10 GPa. The empirical calculation of band-gap and UV test result showed that our deposited $BO_{x}$ $N_{y}$ thin film was semiconductor material with 3.4eV of wide band gap. The electrical conductivity, $4.8$ imes$10^{-2}$ /($Omega$.cm)$^{-1}$ also confirmed that $BO_{x}$ $N_{y}$ has a semiconductor property. The roughness detected from the as-grown films showed that there was no serious bombarding effect due to anion in the plasma occurring in the RF frequency derived plasma.
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