Tunnel i unction-Mangnetorsistance in Co-Al-O$_{x}$-NiFe with oxidation conditions of Al thickness
Jeon, Dong-Min;Park, Jin-Woo;Suh, Su-Jeong;
Depart. of Advanced Materials. Engin., Sungkyunkwan Univ.;
Ferromagnets(FM)-Al-$O_{x}$ -Ferromagnets (FM) tunneling junctions were evaluated by changing the fabricating conditions of an Al-X$/_{x}$ layer. The junction composed of a thicker Al-$O_{x}$ shows the low resistance and the stable MR ratio about 16% in a wide range of oxidation time. For the junctions with the thinner Al-$O_{x}$ , they showed a fast increase of the barrier width as an increase of an oxidation time and exhibited a strong bias dependence. As oxidation time increased, the coercivity ($H_{c}$ ) of bottom Co layer increased gradually due to the local oxidation of Co bottom layer at a interface. However, the small formation of Co oxide did not largely influence on the deterioration of MR ratio.
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