저널

10cm-diameter Si(100)∥$1.3mu extrm{m}$-X$1.3_2$X$1.3mu extrm{m}$-$SiO_2$∥Si(100) afers were prepared using a fast linear annealing (FLA) equipment. 1.3$mu extrm{m}$-thick $SiO_2$ films were grown by dry oxidation process. After cleaning and premating the wafers in a class 100 clean room, they were heat treated using with the FLA and conventional electric furnace. Bonded area and bond strength of wafer pairs were measured using a infrared (IR) camera and razor blade crack opening method, respectively. It was confinmed that the bonded area by FLA was around 99% and the bond strength value reached 2172mJ/$m^2$, which is equivalent to theoritical bond strength. Our result implies that thick $SiO_2$ SOI may be prepared more easily by using $SiO_2$$SiO_2$ bonding interfaces then those of Si/$SiO_2$`s.