저널

SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{circ}C$. The fracture strength was about 21MPa at the temperature of $430^{circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.