저널

Electron field emission properties from various CVD diamond films were studied. Diamond films were synthesized by microwave plasma CVD at 1173K and at 673K substrates temperature and pulse microwave plasma CVD at 1173K. B-doped diamond film was synthesized by microwave plasma CVD at 1173K also. Estimation by SEM, both the non-doped diamond film and B-doped diamond film which were synthesized at 1173K substrate temperature were $2~3mu extrm{m}$ in diameter and nucleation densities were $10^{8}{;}numbers/ extrm{cm}^2$ order. The diamond film synthesized at 673K was $0.2mu extrm{m}$ in diameter and nucleation densities was 109 numbers/cm2 order. The diamond film synthesized by pulse microwave plasma CVD at 1173K was $0.2mu extrm{m}$ in diameter and nucleation density was $10^{9}{;}numbers/ extrm{cm}^2$ order either. From the result of electron field emission measurement, electron field emission at $20V/mu extrm{m}$ from CVD diamond film synthesized by pulse microwave plasma CVD was $37.3mu extrm{A}/ extrm{cm}^2$ and the diamond film showed the best field emission property comparison with other CVD diamond.

Diamond;NEA;CVD;Electric field emission;Pulse microwave;