Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (32권3호 351-355)

MODIFICATION OF INITIALLY GROWN BN LAYERS BY POST-N$^{+}$ IMPLANTATION


Byon, E.S.;Lee, S.H.;Lee, S.R.;Lee, K.H.;J. Tian;Youn, J.H.;Sung, C.;


Korea Institute of Machinery & Materials;Harbin Institute of Technology;Changwon National University;Center for Advanced Materials, University of Massachusetts;

Abstract

BN films with a high content of cubic phase has been deposited by a variety of techniques. It is well known that c-BN films grow with a unique microstructure consisting of $sp^2$ and $sp^{3-}$ bonded layers. Because of existence of the initially grown $sp^{2-}$ /bonded layer, BN films are not adhesive to the substrates. In this study, post-N$^{+ }$ / implantation was applied to improve the adhesion of the films. A Monte Carlo program TAMIX was used to simulate this modification process. The simulation showed nitrogen concentration profile at $1200AA$ in depth in case of 50keV -implantation energy. FTIR spectra of the $N^{+}$ implanted specimens demonstrated a strong change of absorption band at 1380 cm$^{ -1 }$The films were also investigated by HRTEM. From these results, it is concluded that the post ion implantation could be an effective technique which improves the adhesion between BN film and substrate.

Keywords

cubic boron nitride;post-ion implantation;interfacial structure;HRTEM;adhesion;