Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (32권3호 235-238)

ANALYSIS OF THE ANODIC OXIDATION OF SINGLE CRYSTALLINE SILICON IN ETHYLEN GLYCOL SOLUTION


Yuga, Masamitsu;Takeuchi, Manabu;


Graduate School of Science and Engineering, Ibaraki University;Department of Electrical and Electronic Engineering, Ibaraki University;

Abstract

Silicon dioxide films were prepared by anodizing silicon wafers in an ethylene $glycol+HNO_3(0.04{;}N)$ at 20 to $70^{circ}C$. The voltage between silicon anode and platinum cathode was measured during this process. Under the constant current electrolysis, the voltage increased with oxide film growth. The transition time at which the voltage reached the predetermined value depended on the temperature of the electrolyte. After the time of electrolysis reached the transition time, the anodization was changed the constant voltage mode. The depth profile of oxide film/Si substrate was confirmed by XPS analysis to study the influence of the electrolyte temperature on the anodization. Usually, the oxide-silicon peaks disappear in the silicon substrate, however, this peak was not small at $45^{circ}C$ in this region.

Keywords

Anodic Oxidation;Silicon Wafers;Ethylene Glycol;X-ray Photoelectron Spectroscopy;Depth Profile of Oxide Film;