Electrical and Optical Properties of SnO$_2$: F Thin Films by Reactive DC Magnetron Sputtering Method
반응성 DC 마그네트론 스퍼터법에 의한 SnO$_2$ : F 박막의 전기광학적 특성
정영호;김영진;신재혁;송국현;신성호;박정일;박광자;
경기대학교 재료공학과;국립기술품질원;
Fluorine-doped $SnO_2$ thin films were deposited on soda-lime glass substrates by reactive DC magnetron sputtering method. Crystallinity as well as electrical and optical properties of $SnO_2$ : F thin film were investigated as the variations of deposition conditions such as substrate temperature, DC Power, $O_2$ gas pressure, $SF_6$ gas pressure. $SnO_2$ : F thin film deposited with 5% $SF_6$ gas pressure showed electrical resistivities of $2.5 imes10^{-3}$cm with the average optical transparency (about 80%) These electrical and optical properties were found to be related to the crystallinity of $SnO_2$ : F thin films.
PDF