저널

Transparent conductive thin films have found many applications in active and passive electronic and opto-electronic devices such as flat panel display electrode, solar cell electrode and window heat mirror, etc. Low resistivity and high transmittance of these films can beotained by controlling deposition parameters which are oxygen partial pressure, substrate temperature and dopant concentration. In this study, non-stoichiometric and Sb-doped thin electrical properties of undoped films have been degraded with increase of substrate temperature and optical properties have been improved in Sb-doped films. The resistivity of $2.5 imes10^{-3}Omega extrm{cm}$,/TEX>, average transmittance of 80% and sheet resistance of 130$Omega$/$square$ at thickess of 2000 $AA$ could be obrained at optmal condimal conditions which were at $400^{circ}C$ of substrate temperature, 58% of oxygen partial pressure and 5% of Sb doping concentration.