Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (30권2호 121-127)

Electrochemical Behavior of Vanadium Trungsten Oxide Thin Films Deposited by Sputtering

스퍼터링으로 증착한 바나듐 텅스텐 산화물 박막의 전기화학적 거동

박영신;이병일;주승기;

서울대학교 재료공학부;

Abstract

Vanadium tungsten oxide thin films were formed by RF magnetron sputtering and the effects of tungsten addition on the crystallinity and on the electrochemical behavior were investigated. X-ray analysis revealed that amorphized films could be obtained by tungase addition. In order to investigate the electrochemical behavior of the vanadium tungsten oxide films, electrochemical insertion and extraction of lithium were out in 1m $LiCIO_4$-PC-DME electrolyte using litium metal as a counter electrode. When the tungsten was added to the $V_2O_5$ films, cycling reversibility was considerably improved. Electrochemical test showed the cell capacity of about $70mu;Ah/ extrm{cm}^2-mu extrm{m}$ when the amount of additive tungseten reached 30 atomic percent. No appreciable degradation of the cell capacity could be observed after hundred cycles of insertion and extration od Li.

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