A study of CuCl$_{x}$ growth mechanism and etching with Cl$_2$ plasma and PEt$_3$(Tri-ethyl phospine)
Cl$_2$ 플라즈마를 인가한 CuCl$_{x}$성장 및 PEt$_3$를 이용한 CuCl$_{x}$의 식각에 대한 연구
박성언;김기범;
서울대학교 재료공학과;서울대학교 재료공학부;
The growth kinetion of $CuCl_x$ layer on Cu was investigated using $Cl_2$ gas with/without plasma. The etching kinetics ofit was also studied, in which PEt3 gas as well as $Cl_2$ gas were used. when plasma and DC bias were applied, not only the growth rate of $CuCl_x$ layer but also the surface concentration of Cl in $CuCl_x$ layer drastically increased. The growth mode is divided into three regimes, where the thinkness $CuCl_x$ layer ise proportional to t, lo9g $T^{1/2}$ , respectively, whether plasma, is applied or not. These three regime. It is also identified that the eath rate of Cu is drastically increased as the $Cl_2$ pressure is increased. However, when plasma and DC bias were applied, the etching rate is decreased, and ClCu-P-U layer is formed. in addition, as the etching time is increased, the surface concentration of Cl is increased and $CuCl_2$ formed partially.
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