저널

$SrBi_{2x}TaO_9$ ferroelectric thin films were prepared on platinized silicon substrates using MOD proces, and crystallization behavior of the films was investigated with variation of the annealing temperature and Bi content x. Crystalline phase of bismuth layered perovskite structure was formed even by baking the films at $800^{circ}C$ for 5 minutes in air, and was not changed by annealing at temperatures raning from $700^{circ}C$ to $900^{circ}C$ for 1 hour in oxygen ambient. When $SrBi_{2x}TaO_9$ thin films ($0.8lexie1.6$) were annealed at $800^{circ}C$, Preferred orientation of the films along c-axis was observed with $xge1.2$. With increasing Bi content x, surface morphology of the films was changed from equiaxed grains to elongated grains.