Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (29권5호 519-524)

XPS STUDY ON SN-DOPED DLC FILMS PREPARED BY RF PLASMA-ENHANCED CVD


Inoue, Y.;Komoguchi, T.;Nakata, H.;Takai, O.;


Department of Materials Processing Engineering, Nagoya University;

Abstract

We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.

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