Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (29권5호 350-356)

VHF-PECVD OF Ti/TiN WITH SILANE REDUCTION PROCESS


Mizuno, Shigeru;


ANELVA Corpotation, Yotsuya;

Abstract

This paper presents VHF-Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) of Ti/TiN with silne reduction process, using $TiCl_4$ source. VHF plasma, which is denser than a conventional RF plasma, produces a large number of radicals. Silane reduction process, which supplies silane radicals, more promotes dissociation of Ti-Cl bond than a conventional hydrogen reduction process. therefore, the VHF-PECVD with silane reduction process forms high quality Ti/TiN films, which have low level of Cl content(<0.2 at.%). In result, the resistivity for Ti or TiN is less than 200$mu$$Omega$cm. The surface morphology of Ti film is very smooth. The structure of TiN film is amorphous. Furthermore, excellent step coverage for the films is obtained.

Keywords