Crystallographic Characteristics of ZnO Films Deposited on SiO$_2$/Si Substrate
Park, H.D.;Kim, K.S.;Lee, C.S.;Kim, J.W.;Han, B.M.;Kim, S.Y.;
Department of physics, National Fisheries University of Pusan;Department of physics, Korea Advanced Institute of Science and Technology;
The RF planar magnetron sputtering technique was used to fabricate uniform ZnO/$SiO_2$/Si thin films at high growth rate. A detailed crystallographic character of these thin films has been carried oct using XRD, XRC, and SEM. These thin films have the configuration of c-axis orientation perpendicular to $SiO_2$/ Si substrate. The dependence of the thickness of ZnO/$SiO_2$/Si films on applied RF power parameters was also investigated. The crystallinity of films was improved as the substrate temperature was high, RF input power increased, and Ar/$O_2$ ratio decreased. Also, most of ZnO films fabricated on $SiO_2$/Si were suitable for SAW filter since a standard deviation of XRC (002) peak was less than $6^{circ}$. The presence of the $SiO_2$ layer has a beneficial effect on the crystalline quality of the grown ZnO films.
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