저널

Ion implantation is a well established superior superior surface modification technique for the improvement of wear resistance, hardenece, hardness, corrosion resistance, biocompaibity, surface friction, as well as for the modification of surface electric conductance. Conventional ion implantaion is a line-of-sight process witch ues the ion beam accelerator techniques. Plasma sheath ion implantation (PSII), as a new technique, is described in this paper. In PSII high voltage pulse is applied to a target material placed directly in a plasma, forming a think ion-matrix sheath around the target. Ions accelerate through the sheath drop and bombard the traget from all sides simultaneosuslyregardless of the target shape. This paper describes the principle of PSII, which has non-line-of sight characteristics, as well as the experimental appratus.