Effects of Deposition Conditions on the Deposition rate and physical properties of $SnO_2$ film produced by CVD
CVD에 의한 $SnO_2$ Film 제조시 증착조건이 Film의 증착속도 및 물리적 성질에 미치는 영향
이동윤;이상래;
Lee, Dong-Yun;Lee, Sang-Rae;
부산대학교 공과대학 금속공학과;
Department of Metallugical Engineering Pusan National University;
Chemical vapor deposition of $SnO_2$ on Pyrex glass substrate has been investigated using $SnCl_4$ and Oxygen at relatively low temperatures(300-500$^{circ}C$). The critical flow rate, which delineated the surface reaction controlled region from the mass transfer controlled region, was increased with deposition temperature. The apparent activation energy obtained in surface reaction controlled region was about 6Kcal/mole. The results show that deposition rate, electrical conductivity and transmittance were affected mainly by partial pressure of $SnCl_4$, but little by partial pressure f oxygen. The % transmission of 5000A-thick $SnO_2$ film was about 90% in visible spectrum region and sheet resistance was varied in 0.1-10${Omega}$ per square shaped portion of the outer surface of the oxide.
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