한국표면공학회지 (54권6호 302-306)
The Effect of electron beam surface irradiation on the properties of SnO2/Ag/SnO2 thin films
전자빔 표면 조사에 따른 SnO2/Ag/SnO2 박막의 특성 연구
장진규a,†, 김현진a, 최재욱a, 이연학a, 공영민a, 허성보b, 김유성c,†, 김대일a,*
Jin-Kyu Janga,†, Hyun-Jin Kima, Jae-Wook Choia, Yeon-Hak Leea, Young-Min Konga, Sung-Bo Heob, Yu-Sung Kimc,†, Daeil Kima,*
a 울산대학교 첨단소재공학부 b 한국생산기술연구원 동남본부 첨단하이브리드생산기술센터 c 한국생산기술연구원 울산본부 첨단정형공정그룹
a School of Materials Science and Engineering, University of Ulsan, Ulsan 44776, Korea b Korea Institute of Industrial Technology, Yangsan 50635, Korea c Korea Institute of Industrial Technology, Ulsan 44413, Korea
SnO2 30/Ag 15/SnO2 30 nm(SAS) tri-layer films were deposited on the glass substrates with RF and DC magnetron sputtering and then electron beam is irradiated on the surface to investigate the effect of electron bombardment on the opto-electrical performance of the films. electron beam irradiated tri-layer films at 1000 eV show a higher figure of merit of 2.72×10-3 Ω-1 than the as deposited films due to a high visible light transmittance of 72.1% and a low sheet resistance of 14.0 Ω/□, respectively. From the observed results, it is concluded that the post-deposition electron irradiated SnO2 30/Ag 15/SnO2 30 nm tri-layer films can be used as a substitute for conventional transparent conducting oxide films in various opto-electrical applications.
SnO2, Ag, Electron irradiation, X-ray diffraction, Figure of merit
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