Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (54권3호 124-132)

Graphene Growth on the Cobalt and Nickel Sputtered Cu foil Depending on the Annealing Time

코발트와 니켈이 스퍼터링된 구리 포일에서 어닐링 시간에 따른 그래핀 성장

오예찬, 이우진, 김상호*
Ye-Chan Oh, Woo-Jin Lee, Sang-Ho Kim*

한국기술교육대학교 에너지신소재화학공학부
School of Energy, Materials & Chemical Engineering Korea University of Technology and Education, Cheonan City, Chungnam, Republic of Korea

DOI : 10.5695/JKISE.2021.54.3.124

Abstract

Graphene which grown on the cobalt or nickel sputtered copper foil depending on the annealing time was studied. Graphene on the copper foil grown by chemical vapor deposition was compared to those on cobalt or nickel sputtered copper foil by using a RF (Radio Frequency) magnetron sputtering at room temperature. FLG(few-layer graphene) was identified independent of substrates by Raman and X-Ray Photoelectron Spectroscopy analyses. On copper foil, size and area fraction of the graphene growth increased until 30 minutes annealing and then didn’t changed. Comparing to that, graphene on the cobalt refined till 50 minutes annealing, after then the effect disappeared which means a similar shape to that on copper foil. On nickel the graphene refined irrespective of annealing time that is possibly because of the complete solid solution of nickel with copper.

Keywords

Graphene, Cobalt, Nickel, Microstructure, Raman spectroscopy, Annealing time