Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (54권3호 119-123)

Influence of Ag Interlayer on the Optical and Electrical Properties of SnO2 Thin Films

Ag 중간층이 SnO2 박막의 광학적, 전기적 특성에 미치는 영향

장진규a, 김현진a, 최재욱a, 이연학a, 허성보b, 김유성c, 공영민a*, 김대일a*
Jin-Kyu Janga, Hyun-Jin Kima, Jae-Wook Choia, Yeon-Hak Leea, Sung-Bo Heob, Yu-Sung Kimc, Young-Min Konga*, Daeil Kima*

a울산대학교 첨단소재공학부 b한국생산기술연구원 동남본부 에너지소재부품연구그룹 c한국생산기술연구원 울산본부 첨단정형공정그룹
aSchool of Materials Science and Engineering, University of Ulsan, Ulsan 44776, Korea bKorea Institute of Industrial Technology, Yangsan 50635, Korea cKorea Institute of Industrial Technology, Ulsan 44413, Korea

DOI : 10.5695/JKISE.2021.54.3.119

Abstract

SnO2 single layer and SnO2/Ag/SnO2 (SAS) tri-layered films were deposited on the glass substrate by RF and DC magnetron sputtering at room temperature and then the effect of Ag interlayer on the opto-electrical performance of the films were considered. As deposited SnO2 films show a visible transmittance of 85.5 % and a sheet resistance of 1.2⨉104 Ω/□, the SAS films with a 15 nm thick Ag interlayer show a lower resistance of 18.8 Ω/□ and a visible transmittance of 70.6 %, respectively. The figure of merit based on the optical transmittance and sheet resistance revealed that the Ag interlayer in the SnO2 films enhances the opto-electrical performance without substrate heating or annealing process.

Keywords

SnO2, Ag, Sheet resistance, XRD, AFM.