한국표면공학회지 (52권6호 357-363)
Investigation of Synthesis Yield and Diameter Distribution of Single-Walled Carbon Nanotubes Grown at Different Positions in a Horizontal CVD Chamber
수평형 CVD 장치에서 기판 위치에 따른 단일벽 탄소나노튜브의 합성 수율 및 직경 분포 고찰
조성일;정구환;
Jo, Sung-Il;Jeong, Goo-Hwan;
강원대학교 대학원 신소재공학과;
Advanced Materials Science and Engineering, Graduate School of Kangwon National University;
We investigated a synthesis yield and diameter distribution of single-walled carbon nanotubes (SWNTs) with respect to the growth position in a horizontal chemical vapor deposition (CVD) chamber. Thin films and line-patterned Fe films (0.1 nm thickness) were prepared onto ST-cut quartz substrates as catalyst to compare the growth behavior. The line-patterned samples showed higher growth density and parallel alignment than those of the thin film catalyst samples. In addition, line density of the aligned SWNTs at central region of the chamber was 7.7 tubes/㎛ and increased to 13.9 tubes/㎛ at rear region of the CVD chamber. We expect that the enhanced amount of thermally decomposed feedstock gas may contribute to the growth yield enhancement at the rear region. In addition, the lamina flow in the chamber also contribute to the perfect alignment of the SWNTs based on the value of gas velocity, Reynold number, and Knudsen coefficient we employed.
Single-walled carbon nanotubes;Synthesis yield;Diameter distribution;Chemical vapor deposition;Substrate Position;Raman scattering spectroscopy;
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