한국표면공학회지 (52권6호 289-292)
Effect of a ZnO Buffer Layer on the Structural, Optical and Electrical Properties of TIO/ZnO Bi-layered Films
Choe, Su-Hyeon;Park, Yun-Je;Choi, Jin-Young;Kim, Daeil;
School of Materials Science and Engineering, University of Ulsan;
Transparent and conducting titanium doped indium oxide (TIO) thin films were deposited by RF magnetron sputtering on zinc oxide (ZnO)-coated glass substrates to investigate the effect of the ZnO buffer layer on optical and electrical properties of TIO/ZnO bi-layered films. TIO 90 nm / ZnO 10 nm films having a lower resistivity (3.09×10-3 Ωcm) and a higher visible transmittance (80.3%) than other TIO/ZnO films were prepared in this study. Figure of merit results indicate that a 10 nm thick ZnO thin film is an effective buffer layer that enhances optical transmittance and electrical conductivity of TIO films without intentional substrate heating or post-deposition annealing.
ZnO;TIO;Magnetron sputtering;Hall effect;Figure of merit;