저널

We report p-type electrical characteristics of the amorphous $La_2NiO_{4+{delta}}$ thin films which were sputtered on the glass substrates using an RF sputtering system. As-deposited thin films at room temperature and $300^{circ}C$ were amorphous in nature. Post-annealing of the thin film samples over $400^{circ}C$ resulted in the nano-crystallization of the $La_2NiO_{4+{delta}}$. The electrical properties of the films were much dependent on the oxygen partial pressure, temperature of the post-annealing and sputtering ambient. The as-deposited samples at room temperature show a hole concentration of $7.82{ imes}10^{13}cm^{-3}$, and it could be increased as high as $3.51{ imes}10^{22}cm^{-3}$ when the films were post-annealed in an oxygen atmosphere at $500^{circ}C$. Such p-type conductivity behavior of the $La_2NiO_{4+{delta}}$ films suggests that the amorphous and nano-crystallized $La_2NiO_{4+{delta}}$ films have potential for the application as p-type semiconductive or conductive materials at low temperatures where material diffusion is limited.

Lanthanum nickel oxide;thin film;amorphous;RF magnetron sputtering;p-type;