Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (49권3호 301-306)

Nanotexturing and Post-Etching for Diamond Wire Sawn Multicrystalline Silicon Solar Cell

다이아몬드 와이어에 의해 절단된 다결정 실리콘 태양전지의 나노텍스쳐링 및 후속 식각 연구

김명현;송재원;남윤호;김동형;유시영;문환균;유봉영;이정호;
Kim, Myeong-Hyun;Song, Jae-Won;Nam, Yoon-Ho;Kim, Dong-Hyung;Yu, Si-Young;Moon, Hwan-Gyun;Yoo, Bong-Young;Lee, Jung-Ho;

한양대학교 재료화학공학과;일진다이아몬드;
Department of Materials and Chemical Engineering, Hanyang University;Iljin Diamond Co., Ltd.;

DOI : 10.5695/JKISE.2016.49.3.301

Abstract

The effects of nanotexturing and post-etching on the reflection and quantum efficiency properties of diamond wire sawn (DWS) multicrystalline silicon (mc-Si) solar cell have been investigated. The chemical solutions, which are acidic etching solution (HF-$HNO_3$), metal assisted chemical etching (MAC etch) solutions ($AgNO_3$-HF-DI, HF-$H_2O_2$-DI) and post-etching solution (diluted KOH at $80^{circ}C$), were used for micro- and nano-texturing at the surface of diamond wire sawn (DWS) mc-Si wafer. Experiments were performed with various post-etching time conditions in order to determine the optimized etching condition for solar cell. The reflectance of mc-Si wafer texturing with acidic etching solution showed a very high reflectance value of about 30% (w/o anti-reflection coating), which indicates the insufficient light absorption for solar cell. The formation of nano-texture on the surface of mc-Si contributed to the enhancement of light absorption. Also, post-etching time condition of 240 s was found adequate to the nano-texturing of mc-Si due to its high external quantum efficiency of about 30% at short wavelengths and high short circuit current density ($J_{sc}$) of $35.4mA/cm^2$.

Keywords

Diamond wire sawn multicrystalline silicon;Solar cell;Nanotexturing;Post-etching;