저널

Atomic layer deposition (ALD) is essential for the fabrication of nanoscale electronic devices because it has excellent conformality, atomic scale thickness control, and large area uniformity. Metal thin films are one of the important material components for electronic devices as a conductor. As the size of electronic devices shrinks, the thickness of metal thin films is decreased down to few nanometers, and the metal films become non-continuous due to inherent island growth of metal below a critical thickness. So, fabrication of continuous metal thin films by ALD is fundamentally and practically important. Since ALD films are grown through self-saturated reactions between precursors on surface, initial growth characteristics significantly depend on the surface properties and the selection of precursors. In this work, we investigated ALD Pt on $TiO_2$ substrate by using trimethyl-methyl-cyclopentadienyl-Platinum ($MeCpPtMe_3$) precursor and $O_3$ reactant. By using $O_3$ instead of $O_2$, initial nucleation rate of ALD Pt was increased on $TiO_2$ surface, resulting in formation of continuous thin Pt films. Morphologies of ALD Pt on $TiO_2$ were characterized by using Scanning Electron Microscope (SEM) and Energy-Dispersive X-ray Spectroscopy (EDS). Crystallinity of ALD Pt on $TiO_2$ correlated with its growth characteristics was analyzed by X-Ray Diffraction (XRD).

$TiO_2$;Pt;Atomic Layer Deposition;$O_3$;Nucleation;