Effect of Electron Irradiation Energy on the Properties of GZO/SiO2 Thin Films on Polycarbonate
PC 기판위에 증착된 SiO2/GZO박막의 전자빔 조사에너지에 따른 특성 변화
허성보;박민재;정우창;김대일;차병철;
Heo, Sung-Bo;Park, Min-Jae;Jung, Uoo-Chang;Kim, Dae-Il;Cha, Byung-Chul;
한국생산기술연구원;울산대학교 재료공학과;
Korea Institute of Industrial Technology (KITECH);School of materials science and Engineering, University of Ulsan;
DOI : 10.5695/JKISE.2014.47.6.341
Ga-doped ZnO (GZO) single layer and $SiO_2/GZO$ bi-layered films were deposited on Polycarbonate(PC) substrate by radio frequency magnetron sputtering. Influence of the structural, electrical, and optical properties of the films was considered. We have considered the influence of electron irradiation energy of 450 and 900 eV on the stuctural, electrical and optical properties of $SiO_2/GZO$ thin films. The optical transmittance in a visible wave length region increased with the electron irradiation energy. The electrical resistivity of the films were dependent on the electron`s irradiation energy. The $SiO_2/GZO$ films irradiated at 900 eV were showen the lowest resistivity of $7.8{ imes}10^{-3}{Omega}cm$. The film which was irradiated by electron at 900 eV shows 84.3% optical transmittance and also shows lower than contact angle of $58^{circ}$ in this study.
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