Structural and Electrical Properties of Cu(In,Ga)Se2 Thin Films Prepared by RF Magnetron Sputtering without Selenization
셀렌화 공정을 제외한 RF 마그네트론 스퍼터링으로 제작된 Cu(In,Ga)Se2 박막의 구조 및 전기적 특성
최정규;황동현;손영국;
Choi, Jung-Kyu;Hwang, Dong-Hyun;Son, Young-Guk;
부산대학교 재료공학부;
Department of Materials Science and Engineering, Pusan National University;
DOI : 10.5695/JKISE.2013.46.2.075
A one-step route was developed to fabricate $Cu(In,Ga)Se_2$ (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary $CuIn_{0.75}Ga_{0.25}Se_2$ target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential orientation along the (112) direction. The films deposited at $300^{circ}C$ and $400^{circ}C$ revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at $300^{circ}C$ were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.
PDF