Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (45권5호 193-197)

Enhancement of Photoluminescence Intensity of ZnS Nanowires by Annealing in O2

산소 분위기에서 열처리시 ZnS 나노선의 발광 강도 변화

권진업;이종우;
Kwon, Jin-Up;Lee, Jong-Woo;

한국폴리텍대학 인천캠퍼스 신소재응용학과;
Dept. of Advanced Material Eng., Incheon Campus Korea Polytechnicll College;

DOI : 10.5695/JKISE.2012.45.5.193

Abstract

The influence of annealing process in an $O_2$ atmosphere on the photoluminescence (PL) spectra properties of ZnS nanowires has been investigated. ZnS nanowires with the diameters approximately 100 nm and the lengths a few tens micrometers were synthesized by evaporating ZnS powders on Si substrates while using an Au thin film as a catalyst. ZnS nanowires had an NBE emission band at 430 nm in the violet region. The emission intensity was improved drastically by a process in which ZnS nanowires were heat-treated at $500^{circ}C$ in an $O_2$ atmosphere for 45 minutes.

Keywords

Thermal evaporation;Thermal annealing;ZnS;Nanowire;Photoluminescence;