Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (45권3호 117-122)

Effect of Annealing on the Electrical Property and Water Permeability of ZTO/GZO Double-layered TCO Films Deposited by DC, RF Magnetron Co-sputtering

DC, RF 마그네트론 코스퍼터링법으로 증착한 ZTO/GZO 투명전도성막의 열처리 조건이 박막의 물성에 미치는 영향

오성훈;강세원;이건환;정우석;송풍근;
Oh, Sung-Hoon;Kang, Sae-Won;Lee, Gun-Hwan;Jung, Woo-Seok;Song, Pung-Keun;

부산대학교 재료공학부;한국기계연구원 재료연구소;한국전자통신연구원;
Department of Materials Science and Engineering, Pusan National University;Korea Institute of Materials Science (KIMS);Electronics and Telecommunications Research Institute (ETRI);

DOI : 10.5695/JKISE.2012.45.3.117

Abstract

ZTO/GZO double layered films were prepared on unheated non-alkali glass substrates. ZTO films were deposited by RF/DC hybrid magnetron co-sputtering using ZnO (RF) target and $SnO_2$ (DC) targets, and then GZO films were deposited by DC magnetron sputtering using an GZO ($Ga_2O_3$:5.57 wt%) target. These films were post-annealed at temperature of 200, $300^{circ}C$ in air and vacuum ambient for 30 min. In the case of post-annealing in air, ZTO/GZO double layer showed relatively low resistivity change, compared to GZO single layer. Furthermore, ZTO/GZO double layer revealed low WVTR, compared to GZO single layer. Therefore, it can be confirmed that ZTO film doing a role with barrier for water or oxygen diffusion.

Keywords

ZTO;GZO;Double layer;Post-annealing;WVTR;