Electrical and Optical Properties of Ga-doped SnO2 Thin Films Via Pulsed Laser Deposition
Sung, Chang-Hoon;Kim, Geun-Woo;Seo, Yong-Jun;Heo, Si-Nae;Huh, Seok-Hwan;Chang, Ji-Ho;Koo, Bon-Heun;
School of Nano & Advanced Materials Engineering, Changwon National University;Korea FCB Manufacturing Engineering G., Samsung Electro-Mechanics;Major of Semiconductor Physics, Korea Maritime University;
DOI : 10.5695/JKISE.2011.44.4.144
$Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{ imes}10^{-3};{Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.
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