Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (44권2호 39-43)

Surface and Structural Features of a-Si Thin Films Prepared by Various H2/H2+SiH4 Dilution

수소 가스 분율(H2/H2+SiH4)에 따른 비정질 실리콘 박막의 표면 및 구조 분석

권진업;
Kwon, Jin-Up;

한국 폴리텍II대학 인천캠퍼스 신소재응용학과;
Dept. of Advanced Material Eng., Incheon Campus Korea Polytechnicll College;

DOI : 10.5695/JKISE.2011.44.2.039

Abstract

Amorphous silicon thin film was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). Each films were prepared in different dilution in the chamber gas. As a result, silicon crystallites and crystal volume fraction was increased with raising the hydrogen dilution in the gas and optical band gap was decreased. Increasement of the hydrogen contents in the chamber affected on surface roughness. In this study, thickness and surface roughness of the a-Si thin film by different hydrogen dilution was investigated by various techniques.

Keywords

PE CVD;XRD;a-Si;Optical bandgap;AFM;