저널

Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in $Ar/N_2$ gaseous atmosphere. As increasing $N_2$ pressure, the microstructure of Mo-N films changed from ${gamma}-Mo_2N$ of (111) having face-centered-cubic (FCC) structure to $delta$-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the $Mo_2N$ and MoN crystallites were more well-distributed and refined and the copper existed in grain boundary. Ternary Mo-Cu-N films had a composite microstructure of the nanosized crystal crystalline ${gamma}-Mo_2N$ and $delta$-MoN surrounded by amorphous $Cu_3N$ phase.

Mo-Cu-N film;Physical vapor deposition;X-ray photoelectron spectroscopy;Microstructure;