Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403


공학

한국표면공학회지 (43권3호 121-126)

Effects of Current Density and Anodization Time on the Properties of Porous Si

양극산화 시간 및 전류밀도 변화에 따른 다공질 실리콘의 특성 변화

최현영;김민수;김군식;조민영;전수민;임광국;이동율;김진수;김종수;임재영;
Choi, Hyun-Young;Kim, Min-Su;Kim, Ghun-Sik;Cho, Min-Young;Jeon, Su-Min;Yim, Kwang-Gug;Lee, Dong-Yul;Kim, Jin-Soo;Kim, Jong-Su;Leem, Jae-Young;

인제대학교 나노메뉴팩처링연구소 나노시스템공학과;삼성 LED;전북대학교 신소재공학부;영남대학교 물리학과;
Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University;Samsung LED;Division of Advanced Materials Engineering, Chonbuk National University;Department of Physics, Yeungnam University;

DOI : 10.5695/JKISE.2010.43.3.121

Abstract

The PS(porous Si) were fabricated with different anodization time and current density. The structural and optical properties of PS were investigated by SEM(scanning electron microscopy), AFM(atomic force microscopy), and PL(photoluminescence). It is found that the pore size and surface roughness of PS are proportional to the current density. The PL spectra show that the PL peak position is red-shifted with increasing anodization time. This behavior corresponds to the change of pore size which is consistent with the quantum confinement model. The FWHM(full width at half maximum) of PL peak is decreased from 97 to 51 nm and the PL peak position is blue-shifted with increasing current density up to 10 mA/$cm^2$. The PL peak intensity of the PS fabricated under 1 mA/$cm^2$ is the highest among samples.

Keywords

Porous Si;Anodization;Photoluminescence;Scanning electron microscopy;