Growth of Mg Doped CuCrO2 by Pulsed Laser Deposition
PLD법에 의한 Mg가 첨가된 CuCrO2 박막 성장
김세윤;이종철;최임식;이준형;김정주;허영우;
Kim, Se-Yun;Lee, Jong-Chul;Choi, Im-Sic;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo;
경북대학교 신소재공학부;
School of Materials Science and Engineering, Kyungpook National University;
DOI : 10.5695/JKISE.2009.42.2.068
We report on the growth of $CuCrO_2$ films using pulsed laser deposition and their structural and electrical transport properties. $CuCrO_2$ thin films were doped with 5 at% Mg for p-type properties. Epitaxial films of $CuCr_{0.95}Mg_{0.05}O_2$ were grown on c-plane sapphire substrates. The effects of growth temperature and oxygen pressure on film properties were investigated. The main phase of delafossite $CuCr_{0.95}Mg_{0.05}O_2$ was appeared above the growth temperature of $600^{circ}C$. The thin film grown at $500^{circ}C$ showed the highest conductivity, reaching 19.6 S/cm while higher growth temperatures over $500^{circ}C$ led to lower conductivity; the thin film grown at $700^{circ}C$ showed 0.02 S/cm.
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