A Study on Adhesion and Electro-optical Properties of ITO Films Deposited on Flexible PET Substrates with Deposition of SiO2 Buffer Layers
PET 기판 위에 SiO2 버퍼층 증착에 따른 ITO 박막의 부착 및 전기적 광학적 특성 연구
강자연;김동원;조규일;우병일;윤환준;
Kang, Ja-Youn;Kim, Dong-Won;Cho, Kyu-Il;Woo, Byung-Il;Yun, Hwan-Jun;
경기대학교 재료공학과;(주)삼한일렉트로닉스;
Department of Advanced Materials Engineering, Kyonggi University;Samhan Electronics;
DOI : 10.5695/JKISE.2009.42.1.021
Using an evaporation system, $SiO_2$ was deposited as a buffer layer between a PET substrate and a ITO layer and then ITO/$SiO_2$/PET layers were annealed for 1.5 hours at the temperature of $180^{circ}C$. Adhesion and electro-optical properties of ITO films were studied with thickness variance of a $SiO_2$ buffer layer. As a result of introduction of the $SiO_2$ buffer layer, sheet resistance and resistivity increased and a ITO film with optimum sheet resistance ($529.3{Omega}/square$) for an upper ITO film of resistive type touch panel could be obtained when $SiO_2$ of $50{AA}$ was deposited. And it was found that ITO films with $SiO_2$ buffer layer have higher transmittance of $88{sim}90%$ at 550 nm wavelength than ITO films with no buffer layers and the transmittance was enhanced as $SiO_2$ thickness increased from $50{AA}$ to $100{AA}$. Adhesion property of ITO films with $SiO_2$ buffer layers became better than ITO films with no buffer layers and this property was independent of $SiO_2$ thickness variance ($50{sim}100{AA}$). By depositing a $SiO_2$ buffer layer of $50{AA}$ on the PET substrate and sputtering a ITO thin film on the layer, a ITO film with enhanced adhesion, electro-optical properties could be obtained.
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