Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (41권4호 142-146)

Characterization of Ga, Al or In Doped ZnO Films Deposited by DC Magnetron Sputtering

DC 마그네트론 스터링법을 이용하여 증착한 Ga, Al, In 첨가 ZnO 박막의 특성

박상은;박세훈;;송풍근;
Park, Sang-Eun;Park, Se-Hun;Jie, Lue;Song, Pung-Keun;

부산대학교 재료공학부;
Department of Materials Science and Engineering, Pusan National University;

DOI : 10.5695/JKISE.2008.41.4.142

Abstract

Trivalent ions(Ga, Al, In) doped ZnO films were deposited by DC magnetron sputtering on non-alkali glass substrate at substrate temperature of $300^{circ}C$. We used the different three types of high density($95%{sim}$) ceramic sintered disks(doped with $Ga_2O_3$; 6.65 wt%, $Al_2O_3$; 3.0 wt%, $In_2O_3$; 9.54 wt%). This study examined the effect of different dopants(Ga, Al, In) on the electrical, structural, and optical properties of the films. The lowest resistivity of $5.14{ imes}10^{-4}{Omega}cm$ and the highest optical band gap of 3.74 eV were obtained by Ga doped ZnO(GZO) film. All the films had a preferred orientation along the(002) direction, indicating that the growth orientation has a c-axis perpendicular to the substrate surface. The average transmittance of the films was more than 85% in the visible range.

Keywords

TCO;AZO;GZO;ZIO;Magnetron sputtering;Zinc oxide;Ionic radius;