Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (41권2호 48-50)

Solid Phase Crystallization Kinetics of Amorphous Silicon at High Temperatures


Hong, Won-Eui;Kim, Bo-Kyung;Ro, Jae-Sang;


Department of Materials Science and Engineering, Hongik University;

DOI : 10.5695/JKISE.2008.41.2.048

Abstract

Solid phase crystallization (SPC) of amorphous silicon is usually conducted at around $600^{circ}C$ since it is used in the application of flat panel display using thermally susceptible glass substrate. In this study we conducted SPC experiments at temperatures higher than $600^{circ}C$ using silicon wafers. Crystallization rate becomes dramatically rapid at higher temperatures since SPC kinetics is controlled by nucleation with high value of activation energy. We report SPC kinetics of high temperatures compared to that of low temperatures.

Keywords

Solid phase crystallization;Potycrystalline silicon;Kinetics;Nucleation;