Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (41권2호 43-47)

Deposition of c-BN Films on Tungsten Carbide Insert Tool by Microwave Plasma Enhanced Chemical Vapor Deposition(MPECVD)

MPECVD법에 의한 초경인서트 공구의 c-BN 박막 증착

윤수종;김태규;
Yoon, Su-Jong;Kim, Tae-Gyu;

부산대학교 나노정보소재공학과;부산대학교 나노시스템공정공학과;
Dept. of Nanomaterials Engineering, Pusan National University;Dept. of Nanosystem Engineering, Pusan National University;

DOI : 10.5695/JKISE.2008.41.2.043

Abstract

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

Keywords

Insert Tool;c-BN Film;MPECVD(Microwave Plasma Enhanced Chemical Vapor Deposition);Thiethyl Borate;Adhesion;