한국표면공학회지 (41권1호 12-15)
Fabrication and Characterization of FET Device Using ZnO Nanowires
ZnO 나노와이어를 이용한 FET 소자 제작 및 특성 평가
김경원;오원석;장건익;박동원;이정오;김범수;
Kim, K.W.;Oh, W.S.;Jang, G.E.;Park, D.W.;Lee, J.O.;Kim, B.S.;
충북대학교 공과대학 신소재공학과;한국화학연구원 융합바이오연구센터;충북대학교 공과대학 화학공학과;
Department of Advanced Materials Engineering, CBITRC, Chungbuk National University;Fusion Biotechnology Research Center, Korea Research Institute of Chemical Technology;Department of Chemical Engineering, Chungbuk National University;
The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nanowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the
ZnO nanowire;FET;Thermal CVD;
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