Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (40권3호 144-148)

A Study on the Electrical Properties of ITO Thin Films with Various Oxygen Gas Flow Rate

산소 가스 유량비 변화에 따른 ITO 박막의 전기적 특성에 관한 연구

최동훈;금민종;전아람;한전건;
Choi, Dong-H.;Keum, Min-J.;Jean, A.R.;Han, Jean-G.;

성균관대학교 신소재공학과 플라즈마 응용 표면기술 연구센터;
Center for Advanced Plasma Surface Technology, SungKyunKwan University;

DOI : 10.5695/JKISE.2007.40.3.144

Abstract

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{ imes}10^{-4}{Omega}cm$ and surface roughness 5.01 nm.

Keywords

ITO;Facing targets sputtering;Mobility;Carrier concentration;