Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (39권5호 206-209)

The effect of $Ar;+;H_2$ Plasma on the Low Temperature ITO Film Synthesized on Polymer

폴리머 기판상에 합성된 저온 ITO 박막에 미치는 $Ar;+;H_2$ 플라즈마의 영향

문창성;정윤모;이호영;김용모;김갑석;;한전건;
Moon, Chang-S.;Chung, Yun-M.;Lee, Ho-Y.;Kim, Yong-M.;Kim, Kab-S.;Gaillard, M.;Han, Jeon-G.;

성균관대학교 신소재공학과, 플라즈마 응용 표면기술 연구센터;
Center for Advanced Plasma Surface Technology, Sungkyunkwan University;

Abstract

Indium tin oxide (ITO) films were synthesized on polymer (PES, polyethersulfone) at room temperature by pulsed DC magnetron sputtering. By the control of introducing hydrogen to argon atmosphere, the resistivity of ITO films was obtained at $5.27;{ imes};10^{-4};{Omega}{cdot}cm$ without substrate heating in comparison with $2.65;{ imes};10{-3};{Omega}{cdot}cm$ under hydrogen free condition. ITO film synthesized at Ar condition was changed from amorphous to crystalline. These result from the enhancement of electron temperature in $Ar;+;H_2$ plasma, which induces the increase of ionization of target materials and argon. The dominant increase of ions such as In II and O II and neutral Sn I was monitored by optical emission spectroscopy (OES). Thermal energy required for the crystalline film formation is compensated by kinetic energy transfer through ion bombardments to substrate.

Keywords

ITO;Hydrogen;Low temperature;Pulsed magnetron sputtering;