Cyclic on/off Modulation of $CH_4;and/or;O_2$ Flows for the Enhancement of the Diamond Film Characteristics
$CH_4/O_2$의 사이클릭 유량제어에 의한 다이아몬드 박막의 특성향상
김태규;김성훈;윤수종;
Kim Tae-Gyu;Kim Sung-Hoon;Yoon Su-Jong;
부산대학교 나노시스템공정공학과;신라대학교 전자재료공학과;부산대학교 나노정보소재공학과;
Dept. of Nanosystem & Nanoprocessing, Pusan National University;Dept. of Electronic Materials, Silla University;Dept. of Nanomaterials Engineering, Pusan National University;
Diamond films were deposited on 10.0$ imes$10.0$mm^2$ pretreated (100) Si substrate using $CH_4$, $H_2$ and $O_2$ source gases in a horizontal-type microwave plasma enhanced chemical vapor deposition system. We introduced a cyclic on/off modulation of $CH_4$ and/or $O_2$ flows is a function of the reaction time during the initial deposition stage. Surface morphology and diamond quality of the films were investigated as a function of the different cyclic modulation process of the source gases flows: For the enhancement of the nucleation density, there is an optimal process for the incorporation of oxygen. Diamond qualities of the films were improved by introducing oxygen gas during the initial deposition stage.
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