Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (38권5호 193-197)

Room-Temperature Deposition of ZnO Thin Film by Pulsed Vacuum Arc and Effect of Oxygen Gas Ratio on Its Electrical Properties

펄스형 진공 아크법에 의한 ZnO 박막의 상온합성 및 이의 전기적 특성에 미치는 산소분압비의 영향

신민근;변응선;이성훈;김도근;전상조;구본흔;
Shin Min-Geun;Byon Eungsun;Lee Sunghun;Kim Do-Geun;Jeon Sang-Jo;Koo Bon Heun;

창원대학교 나노 신소재공학부;한국기계연구원 표면기술연구센터;국방품질관리소 함정분소;
Changwon National University;Surface Technology Research Center, Korea Institute of Machinery and Materials;Department of Shipbuilding, Defense Quality Assurance Agency;

Abstract

Highly c-axis oriented Zinc oxide (ZnO) films were successfully deposited at room temperature by oxygen ion-assisted pulsed filtered vacuum arc. The effect of oxygen gas ratio ($O_{2}/O_{2}+Ar$ on the preferred orientation, surface morphology and resistivity of the ZnO films were investigated. Highly crystalline ZnO films with (002) orientation were obtained at over $13\%$ of oxygen gas ratio. Increasing oxygen gas ratio up to $80\%$ was found to improve crystallinity of the films. From hall measurements, it was found that the film has n-type characteristic and carrier concentration and its mobility were closely related with oxygen gas ratio. Minimal resistivity of $3.6{ imes}10^{-3}{Omega}{cdot}cm$ was obtained in the range of $20\%$ to $40\%$ of oxygen gas ratio.

Keywords

ZnO film;Pulsed vacuum arc;Oxygen gas ratio;Electrical property;Rllm-temperature deposition;