저널

Indium zinc oxide (IZO) thin films were deposited on glass substrate by dc magnetron sputtering. The effects of oxygen flow rate and deposition temperature on electrical and optical properties of the films were investigated. With addition of small amount of oxygen gas, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about $4.8{ imes}10^{-4}Omega{cdot}cm$. Change of structural properties according to the deposition temperature was observed with XRD, SEM, and AFM. Films deposited above $300^{circ}C$ were found to be polycrystalline. Surface roughness of the films was increased due to the formation of grains on the surface. Electrical conductivity became deteriorated for polycrystalline IZO films. Consequently, high quality IZO films could be prepared by do sputtering with $O_{2}/Ar{simeq}0.03$ and deposition temperature in range of $150~200^{circ}C$; a specific resistivity of $3.4{ imes}10^{-4}{Omega}{cdot}cm$, an optical transmission over $90\%$ at wavelength of 550 nm, and a rms value of surface roughness about $3{AA}$.

indium zinc oxide;Transparent conductive oxide;Sputtering;Electrical transport properties;Transmittance;