Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (38권4호 150-155)

Structure and Properties of Sputtered Indium Tin Oxide Thin Film

R.F Sputtering 법으로 증착한 ITO 박막의 미세구조와 전기$cdot$광학적 특성

정영희;이은수;;;김규호;
Jung Y.H.;Lee E.S.;Munir B.;Wibowo R.A.;Kim K.H.;

영남대학교 신소재공학부;
Yeungnam University, School of Materials Science and Engineering;

Abstract

Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{ imes}10^{-4}{Omega}{cdot}cm$ at 750 nm thickness, $200^{circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.

Keywords

Trgnsparent conducting oxide;ITO;Sputtering;R.F power;Deposition time;