Deposition Of $TiB_2$ Films by High Density Plasma Assisted Chemical Vapor Deposition
고밀도 플라즈마 화학 증착 장치를 이용한 $TiB_2$ 박막 제조
이승훈;남경희;홍승찬;이정중;
Lee S. H.;Nam K. H.;Hong S. C.;Lee J. J.;
서울대학교 공과대학 재료공학부 플라즈마 표면공학 연구실;엘지전자 생산기술원;
Plasma Surface Engineering Lab., School of Materials Science and Engineering, Seoul National University;LG Production Engineering Research Center, LG Electronics;
The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,;BCl_3,;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.
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