Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (38권1호 44-48)

Color Difference Characterization on Nickel Silicides

니켈실리사이드의 색차분석

정영순;송오성;김득중;최용윤;김종준;
Jung Youngsoon;Song Ohsung;Kim Dugjoong;Choi Yongyun;Kim Chongjun;

서울시립대학교 신소재공학과;서울대학교 반도체공동연구소;
Department of Materials Science and Engineering, University of Seoul;Inter-university Semiconductor Research Center, Seoul National University;

Abstract

We prepared nickel silicide layers from p-Si(l00)/SiO₂(2000 Å)/poly-Si(700 Å)/Ni(400 Å) structures, feasible for gates in MOSFETs, by annealing them from 500℃～900℃ for 30 minutes. We measured the color coordination in visible range, cross sectional micro-structure, and surface topology with annealing temperature by an UV-VIS-IR spectrometer, field effect scanning electron microscope(FE-SEM), and scanning probe micro-scope respectively. We conclude that we may identify the nickel silicide by color difference of 0.90 and predict the silicide process reliability by color coordination measurement. The nickel silicide layers showed similar thickness while the columnar grains size and surface roughness increased as annealing temperature increased.

Keywords

Nickel mono silicide;Gate silicide;Silicides;Color difference;NiSi/sub x/;